AON7422E 30v n-channel mosfet v ds i d (at v gs =10v) 40a r ds(on) (at v gs =10v) < 4.3m ? r ds(on) (at v gs =4.5v) < 6.0m ? symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc t c =25c 3.1 14 t c =100c mj maximum junction-to-ambient a c/w r ja 30 60 40 parameter typ max units junction and storage temperature range -55 to 150 c thermal characteristics the AON7422E combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v a 45 drain-source voltage 30 v 20 gate-source voltage 200 pulsed drain current c continuous drain current g avalanche current c 16 continuous drain current 101 20 avalanche energy l=0.1mh c a t a =25c i dsm a t a =70c i d 40 31 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 36 2 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.8 75 3.4 g d s top view 1 2 3 4 8 7 6 5 www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 30 36 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 ua v gs(th) gate threshold voltage 1.3 1.85 2.4 v i d(on) 200 a 3.5 4.3 t j =125c 5.5 6.8 4.5 6 m ? g fs 85 s v sd 0.7 1 v i s 40 a c iss 1950 2445 2940 pf c oss 270 390 510 pf c rss 130 220 310 pf r g 1.2 2.4 3.6 ? q g (10v) 32 41 50 nc q g (4.5v) 15 19 24 nc q gs 7.2 nc q gd 6.6 nc t d(on) 7ns t r 5ns t d(off) 41.5 ns t f 10.5 ns t rr 17.5 22 ns q rr 31 40 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i s =1a,v gs =0v v ds =5v, i d =20a i f =20a, di/dt=500a/ s switching parameters maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz body diode reverse recovery charge i f =20a, di/dt=500a/ s turn-off delaytime v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge r ds(on) static drain-source on-resistance i dss a v ds =v gs i d =250 a v ds =0v, v gs =16v zero gate voltage drain current gate-body leakage current m ? body diode reverse recovery time drain-source breakdown voltage i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a on state drain current v gs =4.5v, i d =16a forward transconductance diode forward voltage v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja t 10s value and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. www.freescale.net.cn 2/6 AON7422E 30v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 0123456 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 2 3 4 5 6 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =16a v gs =10v i d =20a 0 2 4 6 8 10 12 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 3v 4v 4.5v 10v 3.5v www.freescale.net.cn 3/6 AON7422E 30v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 0 1020304050 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 2400 2800 3200 3600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 1 0 m s 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 s r jc =3.4c/w www.freescale.net.cn 4/6 AON7422E 30v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r ja =75c/w 1 10 100 1000 1 10 100 1000 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =100c t a =125c t a =150c www.freescale.net.cn 5/6 AON7422E 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AON7422E 30v n-channel mosfet
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